Design, fabrication, and characterization of germanium MOSFETs with high-k gate dielectric stacks based on the nitride interfacial layers
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Chemical Bonding , Interfaces and Defects in Hafnium Oxide /
Correlations among interface properties and chemical bonding characteristics in HfO 2 /GeO x N y /Ge MIS stacks were investigated using in-situ remote nitridation of the Ge (100) surface prior to HfO 2 atomic layer deposition (ALD). Ultra thin (~1.1 nm), thermally stable and aqueous etch-resistant GeO x N y interfaces layers that exhibited Ge core level photoelectron spectra (PES) similar to st...
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